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Growth Mechanism of Truncated Triangular GaAs Nanowires

Date

2006

Authors

Zou, Jin
Wang, Hui
Auchterlonie, Graeme J
Paladugu, Mohanchand
Gao, Y N
Kim, Yong
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, we have determined the growth mechanism of truncated triangular GaAs nanowires.

Description

Keywords

Keywords: Electric wire; Mechanisms; Nanoscience; Nanostructured materials; Nanostructures; Nanotechnology; Nanowires; Semiconducting gallium; Structural analysis; GaAs(001) substrates; Growth mechanisms; International conferences; Nanoscience and nanotechnology (N GaAs; Lateral growth; Metalorganic chemical vapor deposition; Nanowire; SEM; TEM

Citation

URI

http://hdl.handle.net/1885/27570

Collections

ANU Research Publications

Source

Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/ICONN.2006.340690

Restricted until

2037-12-31

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