Role of nucleation sites on the formation of nanoporous Ge

Abstract

The role of nucleation sites on the formation of nanoporousGe was investigated. Three Gefilms with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90° from incidence at 300 keV with fluences ranging from 3.0 × 10¹⁵ to 3.0 × 10¹⁶Ge⁺/cm². Electron microscopy investigations revealed varying thresholds for nanoporousGe formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporousGe. Show more