Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide

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Della Torre, Alberto
Sinobad, M.
Luther-Davies, Barry
Ma, Pan
Madden, Steve
Debbarma, Sukhanta
Vu, Khu
Moss, David J.
Mitchell, Arnan
Hartmann, Jean-Michel

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SPIE

Abstract

We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB/cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.

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Alberto Della Torre, Milan Sinobad, Barry Luther-Davies, Pan Ma, Stephen Madden, Sukanta Debbarma, Khu Vu, David J. Moss, Arnan Mitchell, JeanMichel Hartmann, Jean-Marc Fedeli, Christelle Monat, Christian Grillet, "Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide," Proc. SPIE 10921, Integrated Optics: Devices, Materials, and Technologies XXIII, 109210A (4 March 2019); doi: 10.1117/12.2517866

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Proceedings of SPIE - The International Society for Optical Engineering

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Open Access

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