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Nanoindentation of Si Nanocrystals in SiO2

Date

2005

Authors

Pok, W
Bradby, Jodie
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Sinc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN for a spherical indenter and between 25 and 50 mN for a Berkovich indenter. The results are consistent with computer simulations of the indentation process on identical systems.

Description

Keywords

Keywords: Mechanical deformations; Microelectronic materials; Si-nanocrystals; Silicon nanocrystals (Si-nc); Embedded systems; Nanocrystalline alloys; Nanoindentation; Nanostructured materials; Nanostructures; Nanotechnology; Silicon compounds; Nanocrystals

Citation

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2004.1577559

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