Electronic Properties of Al p+ Surfaces Formed by Laser Doping from Aluminium Oxide Precursors: Implications for PERC Cell Design and Performance
Aluminium oxide (Al2O3)functions doubly as a high-quality surface passivation material for crystalline silicon and as an aluminium (Al) p-type precursor for laser doping. Thus, p+ doping based on laser ablation of Al2O3 thin-films deposited on a silicon substrate is an attractively simplified process for concurrent local contact definition and aligned surface doping. A number of studies have demonstrated this process, but a careful examination of the influence of laser parameters on the...[Show more]
|Collections||ANU Research Publications|
|01_Walters_Electronic_Properties_of_Al_p%2B_2015.pdf||415.47 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.