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Electronic Properties of Al p+ Surfaces Formed by Laser Doping from Aluminium Oxide Precursors: Implications for PERC Cell Design and Performance

Walters, Daniel; Fell, Andreas; Ernst, Marco; Franklin, Evan; Weber, Klaus


Aluminium oxide (Al2O3)functions doubly as a high-quality surface passivation material for crystalline silicon and as an aluminium (Al) p-type precursor for laser doping. Thus, p+ doping based on laser ablation of Al2O3 thin-films deposited on a silicon substrate is an attractively simplified process for concurrent local contact definition and aligned surface doping. A number of studies have demonstrated this process, but a careful examination of the influence of laser parameters on the...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Energy Procedia
DOI: 10.1016/j.egypro.2015.07.046


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