Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.
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