Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon
-
Altmetric Citations
Sun, Chang; Liu, An Yao; Phang, Sieu Pheng; Rougieux, Fiacre; MacDonald, Daniel
Description
Significant reductions in interstitial iron (Fe<inf>i</inf>) concentrations occur during annealing Fe-containing silicon wafers with silicon nitride films in the temperature range of 250°C-700°C. The silicon nitride films are known to release hydrogen during the annealing step. However, in co-annealed samples with silicon oxide films, which are hydrogen-lean, changes in the Fe<inf>i</inf> concentrations were much less significant. The precipitation of Fe<inf>i</inf> is ruled out as a possible...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2015 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/98548 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.4929757 |
Access Rights: | Open Access |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Sun_Charge_states_of_the_reactants_2015.pdf | 1.4 MB | Adobe PDF |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator