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Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Sun, Chang; Liu, An Yao; Phang, Sieu Pheng; Rougieux, Fiacre; MacDonald, Daniel


Significant reductions in interstitial iron (Fe<inf>i</inf>) concentrations occur during annealing Fe-containing silicon wafers with silicon nitride films in the temperature range of 250°C-700°C. The silicon nitride films are known to release hydrogen during the annealing step. However, in co-annealed samples with silicon oxide films, which are hydrogen-lean, changes in the Fe<inf>i</inf> concentrations were much less significant. The precipitation of Fe<inf>i</inf> is ruled out as a possible...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.4929757
Access Rights: Open Access


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