Sun, Chang; Liu, An Yao; Phang, Sieu Pheng; Rougieux, Fiacre; MacDonald, Daniel
Significant reductions in interstitial iron (Fe<inf>i</inf>) concentrations occur during annealing Fe-containing silicon wafers with silicon nitride films in the temperature range of 250°C-700°C. The silicon nitride films are known to release hydrogen during the annealing step. However, in co-annealed samples with silicon oxide films, which are hydrogen-lean, changes in the Fe<inf>i</inf> concentrations were much less significant. The precipitation of Fe<inf>i</inf> is ruled out as a possible...[Show more]
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