Yan, Di; Cuevas, Andres; Bullock, James; Wan, Yimao; Samundsett, Christian
This paper describes the optimization of a technique to make polysilicon/SiO <inf>x</inf> contacts for silicon solar cells based on doping PECVD intrinsic polysilicon by means of a thermal POCl<inf>3</inf> diffusion process. Test structures are used to measure the recombination current density J<inf>oc</inf> and contact resistivity ρ <inf> c </inf> of the metal/n+ polysilicon/SiO <inf>x</inf> /silicon structures. The phosphorus diffusion temperature and time are optimized for a range of...[Show more]
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