Black, Lachlan Edward
High-efficiency crystalline silicon solar cells must suppress recombination at their
p-type surfaces. Thin-film, amorphous aluminium oxide (Al₂O₃) has been shown
to provide very effective passivation of such surfaces, assisted by its negative fixed
charge. However, many details of Al₂O₃ passivation remain poorly understood.
Furthermore, conventional means of depositing passivating Al₂O₃ are too slow or
too expensive to be suitable for high-volume commercial production.
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