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In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Muto, Hachizo; Asano, Takashi; Wang, Rong-Ping; Kusumori, Takeshi


Apparatus for dual-target simultaneous laser ablation deposition and in situdoping techniques have been developed to achieve p-type doping during epitaxialgrowth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously dopedfilms. Mg-doped GaNfilms have been fabricated on 6H–SiC(0001) and Si(111) substrates in NH₃ ambient by simultaneous ablation of GaN and Mg-metal targets using two...[Show more]

CollectionsANU Research Publications
Date published: 2005-10-14
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2105989


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