In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films
Apparatus for dual-target simultaneous laser ablation deposition and in situdoping techniques have been developed to achieve p-type doping during epitaxialgrowth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously dopedfilms. Mg-doped GaNfilms have been fabricated on 6H–SiC(0001) and Si(111) substrates in NH₃ ambient by simultaneous ablation of GaN and Mg-metal targets using two...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Muto_In_situ_hole_doping_of_2005.pdf||Published Version||198.96 kB||Adobe PDF|
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