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High index contrast polysiloxane waveguides fabricated by dry etching

Madden, Steve; Zhang, M. Y.; Choi, Duk-Yong; Luther-Davies, B.; Charters, R.

Description

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG™ polysiloxane thin films. The use of a silica mask and CHF₃∕O₂etch gas led to large etch selectivity between the silica and IPG™ of >20 and etch rates of >100nm∕min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

dc.contributor.authorMadden, Steve
dc.contributor.authorZhang, M. Y.
dc.contributor.authorChoi, Duk-Yong
dc.contributor.authorLuther-Davies, B.
dc.contributor.authorCharters, R.
dc.date.accessioned2015-12-21T04:18:54Z
dc.date.available2015-12-21T04:18:54Z
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/1885/95144
dc.description.abstractThe authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG™ polysiloxane thin films. The use of a silica mask and CHF₃∕O₂etch gas led to large etch selectivity between the silica and IPG™ of >20 and etch rates of >100nm∕min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.
dc.description.sponsorshipThe support of the Australian Research Council through its Linkage grant and Federation Fellow programs is gratefully acknowledged as well as the financial support of RPO Inc.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0734-2101..."Publisher's version/PDF may be used, on authors and employers website only" from SHERPA/RoMEO site (as at 21/12/15). Copyright 2009 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology A and may be found at https://doi.org/10.1116/1.3119670
dc.sourceJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
dc.subjectKeywords: Etch rates; Etch selectivities; High index contrasts; Index-contrast waveguides; Low loss; Optical circuits; Polysiloxane; Polysiloxane films; Silica masks; Telecommunication applications; Plasma etching; Silica; Silicones; Waveguides; Reactive ion etchin
dc.titleHigh index contrast polysiloxane waveguides fabricated by dry etching
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume27
dc.date.issued2009-04-28
local.identifier.absfor090606
local.identifier.ariespublicationu9912193xPUB276
local.publisher.urlhttp://www.avs.org/
local.type.statusPublished Version
local.contributor.affiliationMadden, Steve, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationZhang, Yang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationChoi, Duk-Yong, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.contributor.affiliationCharters, Robbie, RPO Inc, Australia
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage561
local.bibliographicCitation.lastpage565
local.identifier.doi10.1116/1.3119670
dc.date.updated2016-02-24T12:14:59Z
local.identifier.scopusID2-s2.0-65549099315
local.identifier.thomsonID000265739100024
CollectionsANU Research Publications

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