High index contrast polysiloxane waveguides fabricated by dry etching
The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG™ polysiloxane thin films. The use of a silica mask and CHF₃∕O₂etch gas led to large etch selectivity between the silica and IPG™ of >20 and etch rates of >100nm∕min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films|
|01_Madden_High_index_contrast_2009.pdf||Published Version||519.12 kB||Adobe PDF|
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