Dry etching characteristics of amorphous As₂S₃ film in CHF₃ plasma
The authors describe the dry etching characteristics of amorphous As₂S₃films in CHF₃plasma and the development of an optimized fabrication process for compact waveguides. The observed etching behavior is due to the relative densities of fluorine atoms, polymer precursors, and ions in the plasma which are controlled by the process parameters. In particular, the flow rate of the CHF₃ gas has a significant influence on the etched profile and surface roughness as well as the etch rate of the As₂S₃....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Choi Dry_etching_characteristics_2008.pdf||Published Version||351.38 kB||Adobe PDF|
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