Choi, Duk-Yong; Madden, Steve; Rode, Andrei; Wang, Rongping; Luther-Davies, Barry
We have observed nanoscale phase separation in amorphous arsenic trisulfide (As₂S₃)films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in CF₄–O₂plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etchedsurfaces comes from the differential chemical attack between different phases in the film.
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.