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Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As₂S₃) films and its effect on plasma etching

Choi, Duk-Yong; Madden, Steve; Rode, Andrei; Wang, Rongping; Luther-Davies, Barry


We have observed nanoscale phase separation in amorphous arsenic trisulfide (As₂S₃)films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in CF₄–O₂plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etchedsurfaces comes from the differential chemical attack between different phases in the film.

CollectionsANU Research Publications
Date published: 2007-10-23
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2798936


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