The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface
A combination of electron paramagnetic resonance(EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces.EPRmeasurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Jin_The_effect_of_boron_diffusions_2008.pdf||75.09 kB||Adobe PDF|
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