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The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

Jin, H.; Jellett, W. E.; Chun, Z.; Weber, K. J.; Blakers, A. W.; Smith, P. J.


A combination of electron paramagnetic resonance(EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces.EPRmeasurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface...[Show more]

CollectionsANU Research Publications
Date published: 2008-03-26
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2903698


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