Skip navigation
Skip navigation

The effect of boron diffusions on the defect density and recombination at the (111) silicon-silicon oxide interface

Jin, H.; Jellett, W. E.; Chun, Z.; Weber, K. J.; Smith, P. J.; Blakers, Andrew


A combination of electron paramagnetic resonance(EPR) and minority carrier lifetime measurements is used to unambiguously demonstrate that the presence of a B diffusion layer at the surface of oxidized Si (111) wafers causes a significant increase in the interface defect density as well as interface recombination, compared to undiffused surfaces.EPRmeasurements show a nearly three-fold increase in the Pb center density, while the lifetime measurements indicate an increase in surface...[Show more]

CollectionsANU Research Publications
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2903698


File Description SizeFormat Image
01_Jin_The_effect_of_boron_diffusions_2008.pdf75.09 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator