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Defects in silicon nanowires

Wang, R. P.

Description

Defects in siliconnanowires have been investigated using the electron spin resonance(ESR) method. The ESR signals consist of three features: a strong resonance at g=2.00249, a weak line at g=2.00048, and a broad feature at g=2.00541. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and the weak line to the well-assigned E′ center. We argue that the assignment of the broad feature to Pb...[Show more]

CollectionsANU Research Publications
Date published: 2006-04-04
Type: Journal article
URI: http://hdl.handle.net/1885/95099
Source: Applied Physics Letters
DOI: 10.1063/1.2191830

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