Defects in silicon nanowires
Defects in siliconnanowires have been investigated using the electron spin resonance(ESR) method. The ESR signals consist of three features: a strong resonance at g=2.00249, a weak line at g=2.00048, and a broad feature at g=2.00541. From the saturation behavior and oxidation-related and temperature dependence analysis, we ascribe that the strong resonance corresponds to the EX center and the weak line to the well-assigned E′ center. We argue that the assignment of the broad feature to Pb...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Wang_Defects_in_silicon_na_2006.pdf||Published Version||58.78 kB||Adobe PDF|
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