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Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing

Macdonald, D.; Cuevas, A.; Geerligs, L. J.

Description

We present a method for measuring the concentrations of ionized acceptors and donors in compensated p-type silicon at room temperature.Carrier lifetimemeasurements on silicon wafers that contain minute traces of iron allow the iron-acceptor pair formation rate to be determined, which in turn allows the acceptor concentration to be calculated. Coupled with an independent measurement of the resistivity and a mobility model that accounts for majority and minority impurity scatterings of charge...[Show more]

CollectionsANU Research Publications
Date published: 2008-05-23
Type: Journal article
URI: http://hdl.handle.net/1885/95093
Source: Applied Physics Letters
DOI: 10.1063/1.2936840

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