Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Macdonald_Imaging_interstitial_iron_2008.pdf||Published Version||514.8 kB||Adobe PDF|
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