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Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence

Macdonald, D.; Tan, J.; Trupke, T.

Description

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtained more rapidly than with existing point-by-point iron mapping techniques. However, because the...[Show more]

CollectionsANU Research Publications
Date published: 2008-04-04
Type: Journal article
URI: http://hdl.handle.net/1885/95091
Source: Journal of Applied Physics
DOI: 10.1063/1.2903895

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