Limitations of a simplified dangling bond recombination model for a-Si:H
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Li, Tsu-Tsung Andrew; McIntosh, Keith R.; Cuevas, Andres
Description
The validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon (a-Si:H) is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped electrons and holes. However, these quasi-Fermi levels for traps have not been derived before. In this work, we derive the four relevant quasi-Fermi levels for traps associated with dangling bonds in a-Si:H...[Show more]
Collections | ANU Research Publications |
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Date published: | 2008-12-10 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/95090 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.3037235 |
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01_Li_Limitations_of_a_simplified_2008.pdf | Published Version | 348.69 kB | Adobe PDF |
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