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Limitations of a simplified dangling bond recombination model for a-Si:H

Li, Tsu-Tsung Andrew; McIntosh, Keith R.; Cuevas, Andres

Description

The validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon (a-Si:H) is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped electrons and holes. However, these quasi-Fermi levels for traps have not been derived before. In this work, we derive the four relevant quasi-Fermi levels for traps associated with dangling bonds in a-Si:H...[Show more]

CollectionsANU Research Publications
Date published: 2008-12-10
Type: Journal article
URI: http://hdl.handle.net/1885/95090
Source: Journal of Applied Physics
DOI: 10.1063/1.3037235

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