Limitations of a simplified dangling bond recombination model for a-Si:H
The validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon (a-Si:H) is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped electrons and holes. However, these quasi-Fermi levels for traps have not been derived before. In this work, we derive the four relevant quasi-Fermi levels for traps associated with dangling bonds in a-Si:H...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Li_Limitations_of_a_simplified_2008.pdf||Published Version||348.69 kB||Adobe PDF|
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