Boron nanobelts grown under intensive ion bombardment
High-quality α-tetragonal crystalline boronnanobelts with  growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growingboronnanobelts at a high substrate temperature (∼1200°C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|01_Li_Boron_nanobelts_grown_under_2008.pdf||Published Version||226.15 kB||Adobe PDF|
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