Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization
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Ruffell, S.; Bradby, J. E.; Fujisawa, N.; Williams, J. S.
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In situ electrical measurements during nanoindentation of Czochralski grown p-type crystalline silicon (100) have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ∼10pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive...[Show more]
dc.contributor.author | Ruffell, S. | |
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dc.contributor.author | Bradby, J. E. | |
dc.contributor.author | Fujisawa, N. | |
dc.contributor.author | Williams, J. S. | |
dc.date.accessioned | 2015-12-15T22:12:01Z | |
dc.date.available | 2015-12-15T22:12:01Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/95034 | |
dc.description.abstract | In situ electrical measurements during nanoindentation of Czochralski grown p-type crystalline silicon (100) have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ∼10pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive to phase changes during indentation, as well as to the final phase composition within the indented volume. For example, differences in the final structure are detected by current-voltage measurements even in an unloading regime in which only amorphous silicon is expected to form. The electrical measurements are interpreted with the aid of previously reported transmission electron microscopy and Raman microspectroscopy measurements. | |
dc.description.sponsorship | This work was funded by the Australian Research Council and WRiota Pty Ltd. | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2724803 | |
dc.source | Journal of Applied Physics | |
dc.subject | Keywords: Crystalline materials; Electric currents; Electric field effects; Nanoindentation; Phase composition; Sensitivity analysis; Silicon; Transmission electron microscopy; Current-voltage curves; In situ electrical characterization; In situ electrical measurem | |
dc.title | Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.identifier.citationvolume | 101 | |
dc.date.issued | 2007-04-30 | |
local.identifier.absfor | 090699 | |
local.identifier.ariespublication | u8709800xPUB77 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Ruffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Bradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Fujisawa, Naoki, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.contributor.affiliation | Williams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 8 | |
local.bibliographicCitation.startpage | 083531 | |
local.bibliographicCitation.lastpage | 7 | |
local.identifier.doi | 10.1063/1.2724803 | |
dc.date.updated | 2016-02-24T11:43:08Z | |
local.identifier.scopusID | 2-s2.0-33947239983 | |
Collections | ANU Research Publications |
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