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Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization

Ruffell, S.; Bradby, J. E.; Fujisawa, N.; Williams, J. S.

Description

In situ electrical measurements during nanoindentation of Czochralski grown p-type crystalline silicon (100) have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ∼10pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive...[Show more]

CollectionsANU Research Publications
Date published: 2007-04-30
Type: Journal article
URI: http://hdl.handle.net/1885/95034
Source: Journal of Applied Physics
DOI: 10.1063/1.2724803

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