Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization
In situ electrical measurements during nanoindentation of Czochralski grown p-type crystalline silicon (100) have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ∼10pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Ruffell_Identification_of_2007.pdf||Published Version||123.51 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.