Kucheyev, S. O.; Bradby, J. E.; Ruffell, S.; Li, C. P.; Felter, T. E.; Hamza, A. V.
Although Er-doped Genanomaterials are attractive for photonic applications, very little is known about the basic properties of Er in Ge. Here, the authors study the annealing behavior of Geimplanted with keV Er ions to doses resulting in ≲1at.% of Er. Large redistribution of Er, with segregation at the amorphous/crystalline interface, starts at ≳500°C, while lower temperatures are required for material recrystallization. However, even at 400°C, Er forms precipitates. The concentration of Er...[Show more]
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