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Effects of carbon on ion-implantation-induced disorder in GaN

Kucheyev, S. O.; Bradby, J. E.; Li, C. P.; Ruffell, S.; van Buuren, T.; Felter, T. E.


Wurtzite GaN films bombarded with 40keV C ions to high doses (5×10¹⁷ and 1×10¹⁸cm⁻²) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (—C≡N) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of ≳5-nm-large N₂ gas bubbles.

CollectionsANU Research Publications
Date published: 2007-12-26
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2827587


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