Effects of carbon on ion-implantation-induced disorder in GaN
Wurtzite GaN films bombarded with 40keV C ions to high doses (5×10¹⁷ and 1×10¹⁸cm⁻²) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (—C≡N) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of ≳5-nm-large N₂ gas bubbles.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kucheyev_Effects_of_carbon_on_2007.pdf||Published Version||448.14 kB||Adobe PDF|
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