Rao, R.; Bradby, J. E.; Williams, J. S.
An array of features on Si 100 is fabricated by a new maskless pattering process involving a
combination of indentation and anisotropic wet chemical etching. Indentation is carried out in order
to induce transformation to the high-pressure phases, Si III and Si XII, before etching in a KOH
solution. The pressure-induced phases are found to be highly resistant to etching in the KOH
solution, with an etch rate more than an order of magnitude slower than that of Si 100. The
possibility of...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.