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Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon

Ruffell, S.; Bradby, J. E.; Williams, J. S.; Munroe, P.


Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unloading has been studied by Raman micro-spectroscopy, cross-sectional transmission electron microscopy (XTEM), and postindentation electrical measurements. For indentation in crystalline silicon(c-Si), rapid unloading (∼1000 mN∕s) results in the formation of amorphous silicon(a-Si) only; a result we have exploited to quench the formation of high pressure phases at various stages during unloading...[Show more]

CollectionsANU Research Publications
Date published: 2007-09-26
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2781394


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