Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon
Nanoindentation-induced formation of high pressure crystalline phases (Si-III and Si-XII) during unloading has been studied by Raman micro-spectroscopy, cross-sectional transmission electron microscopy (XTEM), and postindentation electrical measurements. For indentation in crystalline silicon(c-Si), rapid unloading (∼1000 mN∕s) results in the formation of amorphous silicon(a-Si) only; a result we have exploited to quench the formation of high pressure phases at various stages during unloading...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Ruffell_Formation_and_growth_of_2007.pdf||Published Version||493.29 kB||Adobe PDF|
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