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Ultrahigh-temperature microwave annealing of Al⁺- and P⁺-implanted 4H-SiC

Sundaresan, Siddarth G.; Rao, Mulpuri V.; Tian, Yong-lai; Ridgway, Mark C.; Schreifels, John A.; Kopanski, Joseph J.

Description

In this work, an ultrafast solid-state microwaveannealing has been performed, in the temperature range of 1700–2120°C on Al⁺- and P⁺-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ∼600°C∕s. The samples were annealed for 5–60s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4nm for 5×5μm²...[Show more]

CollectionsANU Research Publications
Date published: 2007-04-12
Type: Journal article
URI: http://hdl.handle.net/1885/95019
Source: Journal of Applied Physics
DOI: 10.1063/1.2717016

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