Ultrahigh-temperature microwave annealing of Al⁺- and P⁺-implanted 4H-SiC
In this work, an ultrafast solid-state microwaveannealing has been performed, in the temperature range of 1700–2120°C on Al⁺- and P⁺-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ∼600°C∕s. The samples were annealed for 5–60s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4nm for 5×5μm²...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Sundaresan_Ultrahigh-temperature_2007.pdf||Published Version||506.52 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.