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Structural and elastic characterization of Cu-implanted SiO₂ films on Si(100) substrates

Shirokoff, J.; Young, C. K.; Brits, L. C.; Andrews, G. T.; Johannessen, B.; Ridgway, M. C.

Description

Cu-implanted SiO₂ films on Si(100) have been studied and compared to unimplanted SiO₂ on Si(100) using x-ray methods, transmission electron microscopy, Rutherford backscattering, and Brillouin spectroscopy. The x-ray results indicate the preferred orientation of Cu {111} planes parallel to the Si substrate surface without any directional orientation for Cu-implanted SiO₂∕Si(100) and for Cu-implanted and annealedSiO₂∕Si(100). In the latter case, transmission electron microscopy reveals the...[Show more]

CollectionsANU Research Publications
Date published: 2007-02-16
Type: Journal article
URI: http://hdl.handle.net/1885/95017
Source: Journal of Applied Physics
DOI: 10.1063/1.2437690

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