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Impurity-free disordering of InAs/InP quantum dots

Barik, S; Fu, Lan; Jagadish, C.; Tan, Hark Hoe

Description

Impurity-free disordering (IFD) of the InAs quantum dots (QDs) capped with either an InP layer or an InGaAs∕InP bilayer is studied. The samples are coated with a SiO₂ or TiO₂ dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850°C for 30s . A large differential energy shift of 157meV is induced by SiO₂ in the QDs capped with an InGaAs∕InP bilayer. Contrary to the reported results on the suppression of intermixing of GaAs based QDs by TiO₂ , the authors find that...[Show more]

dc.contributor.authorBarik, S
dc.contributor.authorFu, Lan
dc.contributor.authorJagadish, C.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-14T22:56:18Z
dc.date.available2015-12-14T22:56:18Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/95014
dc.description.abstractImpurity-free disordering (IFD) of the InAs quantum dots (QDs) capped with either an InP layer or an InGaAs∕InP bilayer is studied. The samples are coated with a SiO₂ or TiO₂ dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850°C for 30s . A large differential energy shift of 157meV is induced by SiO₂ in the QDs capped with an InGaAs∕InP bilayer. Contrary to the reported results on the suppression of intermixing of GaAs based QDs by TiO₂ , the authors find that intermixing of InAs∕InP QDs is promoted by TiO2 . X-ray photoelectron spectroscopy depth profiles show that both In and P outdiffuse to a TiO₂ layer whereas Ga, In, and P outdiffuse to a SiO₂ layer leading to different degrees of intermixing. The results indicate that a group V interstitial diffusion mechanism might be responsible for IFD of InAs∕InP QDs.
dc.description.sponsorshipThe financial support from the Australian Research Council is also gratefully acknowledged.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2748845
dc.sourceApplied Physics Letters
dc.subjectKeywords: Crystal impurities; Dielectric materials; Diffusion; Semiconducting indium compounds; X ray photoelectron spectroscopy; Bilayers; Dielectric layers; Differential energy shift; Intermixing; Semiconductor quantum dots
dc.titleImpurity-free disordering of InAs/InP quantum dots
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume90
dc.date.issued2007-06-15
local.identifier.absfor100799
local.identifier.ariespublicationu8709800xPUB5
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationBarik, Satyanarayan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue24
local.bibliographicCitation.startpage243114
local.bibliographicCitation.lastpage3
local.identifier.doi10.1063/1.2748845
dc.date.updated2016-02-24T11:43:03Z
local.identifier.scopusID2-s2.0-34250646268
CollectionsANU Research Publications

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