Barik, S; Fu, Lan; Jagadish, C.; Tan, Hark Hoe
Impurity-free disordering (IFD) of the InAs quantum dots (QDs) capped with either an InP layer or an InGaAs∕InP bilayer is studied. The samples are coated with a SiO₂ or TiO₂ dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850°C for 30s . A large differential energy shift of 157meV is induced by SiO₂ in the QDs capped with an InGaAs∕InP bilayer. Contrary to the reported results on the suppression of intermixing of GaAs based QDs by TiO₂ , the authors find that...[Show more]
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