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High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots

Barik, S.; Jagadish, C.; Tan, Hark Hoe

Description

The effect of high temperature annealing of the InAs∕InPquantum dots(QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900°C for 30s. The QDs with the GaAs interlayer show good thermal stability up to 850°C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy(450keV) phosphorous ion implantation at room temperature with doses of 5×10¹¹–5×10¹³ions/cm² with subsequent...[Show more]

dc.contributor.authorBarik, S.
dc.contributor.authorJagadish, C.
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-14T05:50:12Z
dc.date.available2015-12-14T05:50:12Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/95012
dc.description.abstractThe effect of high temperature annealing of the InAs∕InPquantum dots(QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900°C for 30s. The QDs with the GaAs interlayer show good thermal stability up to 850°C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy(450keV) phosphorous ion implantation at room temperature with doses of 5×10¹¹–5×10¹³ions/cm² with subsequent high temperature (750–850°C)rapid thermal annealing is also studied. A large implantation-inducedenergy shift of up to 309meV (400nm) is observed. The implanted samples annealed at 850°C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750°C.
dc.description.sponsorshipThe authors gratefully acknowledge financial support from the Australian Research Council.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2710006
dc.sourceApplied Physics Letters
dc.subjectKeywords: High temperature effects; Ion implantation; Linewidth; Photoluminescence; Rapid thermal annealing; Semiconducting indium compounds; Thermodynamic stability; Enhanced integrated photoluminescence (PL) intensity; Induced energy shift; Phosphorous ion implan
dc.titleHigh temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume90
dc.date.issued2007-02-27
local.identifier.absfor100799
local.identifier.ariespublicationu8709800xPUB4
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationBarik, Satyanarayan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue9
local.bibliographicCitation.startpage093106
local.bibliographicCitation.lastpage3
local.identifier.doi10.1063/1.2710006
dc.date.updated2016-02-24T11:43:03Z
local.identifier.scopusID2-s2.0-33847624257
CollectionsANU Research Publications

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