High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots
The effect of high temperature annealing of the InAs∕InPquantum dots(QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900°C for 30s. The QDs with the GaAs interlayer show good thermal stability up to 850°C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy(450keV) phosphorous ion implantation at room temperature with doses of 5×10¹¹–5×10¹³ions/cm² with subsequent...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Barik_High_temperature_rapid_thermal_2007.pdf||Published Version||71.33 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.