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High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots

Barik, S.; Jagadish, C.; Tan, Hark Hoe

Description

The effect of high temperature annealing of the InAs∕InPquantum dots(QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900°C for 30s. The QDs with the GaAs interlayer show good thermal stability up to 850°C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy(450keV) phosphorous ion implantation at room temperature with doses of 5×10¹¹–5×10¹³ions/cm² with subsequent...[Show more]

CollectionsANU Research Publications
Date published: 2007-02-27
Type: Journal article
URI: http://hdl.handle.net/1885/95012
Source: Applied Physics Letters
DOI: 10.1063/1.2710006

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