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Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge

Hickey, D. P.; Bryan, Z. L.; Jones, K. S.; Elliman, R. G.; Haller, E. E.


Geimplanted with 1MeV Si⁺ at a dose of 1×10¹⁵cm⁻² creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects–end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell...[Show more]

CollectionsANU Research Publications
Date published: 2007-03-28
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2717538


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