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Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy

Mokkapati, S.; Tan, H. H.; Jagadish, C.

Description

The authors demonstrate multiple wavelength lasers fabricated from InGaAsquantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack of InGaAsquantum dots with different band gapenergies in selected regions of the substrate, for fabrication of the lasers. The mechanism responsible for engineering of the band gap of quantum dots is discussed. The performance of the selectively grown lasers is compared to the lasers fabricated from structures grown in a...[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/95001
Source: Applied Physics Letters
DOI: 10.1063/1.2731729

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