In Situ Measurements of the Channeling Dependence of Ion-beam-induced Recrystallization in Silicon
The crystallization rate of surface amorphous silicon layers irradiated with 7 MeV Au4+ ions has been studied for random and channeling incident beams. The movement of the amorphous/crystalline interfaces was monitored by in situ time resolved reflectivity and ex situ Rutherford backscattering spectrometry. Our experimental results reveal a clear channeling effect on the crystallization rates. Comparison of our data with calculations of the point defect distributions performed with the MARLOWE...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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