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An X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices

dc.contributor.authorHolt, Sabine
dc.contributor.authorBrown, A S
dc.contributor.authorYuan, Shu
dc.date.accessioned2015-12-13T23:35:06Z
dc.date.available2015-12-13T23:35:06Z
dc.identifier.issn0927-7757
dc.identifier.urihttp://hdl.handle.net/1885/93760
dc.publisherElsevier
dc.sourceColloids and Surfaces A: Physicochemical and Engineering Aspects
dc.titleAn X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume155
dc.date.issued1999
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub25163
local.type.statusPublished Version
local.contributor.affiliationHolt, Sabine, University of Wollongong
local.contributor.affiliationBrown, A S, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYuan, Shu, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.startpage85?91
dc.date.updated2015-12-12T09:38:43Z
CollectionsANU Research Publications

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