Dislocation-induced changes in quantum dots: step alignment and radiative emission
A new type of quantum dot (QD) alignment for an InGaAs/GaAs QD multilayered structure has been observed. In addition to two distinct types of InGaAs dot alignment in vicinal GaAs (001), an abrupt transition in QD sizes and concentrations was seen. This was accompanied by bright QD emission, even after formation of a dislocation array, and different behaviors with thermal intermixing.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Leon_Dislocation-induced_changes_in_1999.pdf||709.17 kB||Adobe PDF||Request a copy|
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