Leech, P W; Ridgway, Mark C
The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.
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