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Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Leech, P W; Ridgway, Mark C


The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(99)00578-9


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