Mass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in Silicon
The effect of ion mass on ion-beam-induced epitaxial crystallization of silicon has been examined for five types of ion (C, Si, Ge, Ag, Au) at energies of 1.5, 3.0, and 5.6 MeV. Regrowth rates have been normalized to the number of displacements or nuclear energy deposition at the interface to evaluate the contribution of defect generation to crystal growth. The normalized regrowth rate increased by a factor of 4 with decreasing ion mass from Au to C, showing a similar behavior to dose rate...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B|
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