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Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization

Kinomura, A; Chayahara, A; Tsubouchi, N; Horino, Y.; Williams, James

Description

Activation energies of ion beam induced epitaxial crystallization (IBIEC) of Si have been measured for B, C and O ions at 0.7 or 3 MeV at temperatures 150-400°C. An activation energy for B was measured to be 0.26 eV in the range 250-400°C. This value wa

dc.contributor.authorKinomura, A
dc.contributor.authorChayahara, A
dc.contributor.authorTsubouchi, N
dc.contributor.authorHorino, Y.
dc.contributor.authorWilliams, James
dc.date.accessioned2015-12-13T23:34:58Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93695
dc.description.abstractActivation energies of ion beam induced epitaxial crystallization (IBIEC) of Si have been measured for B, C and O ions at 0.7 or 3 MeV at temperatures 150-400°C. An activation energy for B was measured to be 0.26 eV in the range 250-400°C. This value wa
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Activation energy; Boron; Carbon; Crystal defects; Crystallization; Epitaxial growth; Ion beams; Oxygen; Semiconductor growth; Thermal effects; Ion beam induced epitaxial crystallization (IBIEC); Semiconducting silicon Activation energy; Epitaxy; IBIEC; Light ion
dc.titleActivation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume148
dc.date.issued1999
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub25087
local.type.statusPublished Version
local.contributor.affiliationKinomura, A, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationChayahara, A, Osaka National Research Institute
local.contributor.affiliationTsubouchi, N, National Institute of Advanced Industrial Science and Technology
local.contributor.affiliationHorino, Y., National Institute of Advanced Industrial Science and Technology
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage370
local.bibliographicCitation.lastpage374
dc.date.updated2015-12-12T09:38:08Z
local.identifier.scopusID2-s2.0-0033513889
CollectionsANU Research Publications

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