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Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization

Kinomura, A; Chayahara, A; Tsubouchi, N; Horino, Y.; Williams, James


Activation energies of ion beam induced epitaxial crystallization (IBIEC) of Si have been measured for B, C and O ions at 0.7 or 3 MeV at temperatures 150-400°C. An activation energy for B was measured to be 0.26 eV in the range 250-400°C. This value wa

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B


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