Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
Activation energies of ion beam induced epitaxial crystallization (IBIEC) of Si have been measured for B, C and O ions at 0.7 or 3 MeV at temperatures 150-400°C. An activation energy for B was measured to be 0.26 eV in the range 250-400°C. This value wa
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Kinomura_Activation_Energies_for_Light_1999.pdf||155.47 kB||Adobe PDF||Request a copy|
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