Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
Kinomura, A; Chayahara, A; Tsubouchi, N; Horino, Y.; Williams, James
Description
Activation energies of ion beam induced epitaxial crystallization (IBIEC) of Si have been measured for B, C and O ions at 0.7 or 3 MeV at temperatures 150-400°C. An activation energy for B was measured to be 0.26 eV in the range 250-400°C. This value wa
| Collections | ANU Research Publications |
|---|---|
| Date published: | 1999 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/93695 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Kinomura_Activation_Energies_for_Light_1999.pdf | 155.47 kB | Adobe PDF | Request a copy |
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