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Proton irradiation of n-type GaAs

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Goodman, S; Auret, Francois D; Ridgway, Mark C; Myburg, G

Description

In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.

dc.contributor.authorGoodman, S
dc.contributor.authorAuret, Francois D
dc.contributor.authorRidgway, Mark C
dc.contributor.authorMyburg, G
dc.date.accessioned2015-12-13T23:34:57Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93688
dc.description.abstractIn this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crystal defects; Deep level transient spectroscopy; Epitaxial growth; Proton irradiation; Semiconducting silicon; Semiconductor doping; Semiconductor growth; Defect clusters; Semiconducting gallium arsenide Deep level transient spectroscopy; Defects; GaAs; Proton irradiation
dc.titleProton irradiation of n-type GaAs
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolumeB148
dc.date.issued1999
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub25080
local.type.statusPublished Version
local.contributor.affiliationGoodman, S, University of Pretoria
local.contributor.affiliationAuret, Francois D, University of Pretoria
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMyburg, G, University of Pretoria
local.description.embargo2037-12-31
local.bibliographicCitation.startpage446
local.bibliographicCitation.lastpage449
dc.date.updated2015-12-12T09:38:06Z
local.identifier.scopusID2-s2.0-0033513838
CollectionsANU Research Publications

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