Proton irradiation of n-type GaAs
Goodman, S; Auret, Francois D; Ridgway, Mark C; Myburg, G
Description
In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.
| Collections | ANU Research Publications |
|---|---|
| Date published: | 1999 |
| Type: | Journal article |
| URI: | http://hdl.handle.net/1885/93688 |
| Source: | Nuclear Instruments and Methods in Physics Research: Section B |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Goodman_Proton_irradiation_of_n-type_1999.pdf | 112.89 kB | Adobe PDF | Request a copy |
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