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Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon

Goldberg, Richard; Williams, James; Elliman, Robert

Description

Nucleation of an amorphous Si layer is shown to occur preferentially at a thin band of dislocations during self-ion-irradiation of silicon at elevated temperatures. This process occurs even when the defect band is well separated from the peak of the ion damage distribution. Without such a nucleation site, amorphization does not occur under identical bombardment conditions. These results suggest that amorphization can be nucleation limited under conditions where significant defect annealing...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93687
Source: Physical Review Letters

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