Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
Nucleation of an amorphous Si layer is shown to occur preferentially at a thin band of dislocations during self-ion-irradiation of silicon at elevated temperatures. This process occurs even when the defect band is well separated from the peak of the ion damage distribution. Without such a nucleation site, amorphization does not occur under identical bombardment conditions. These results suggest that amorphization can be nucleation limited under conditions where significant defect annealing...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review Letters|
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