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Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source

Deenapanray, Prakash; Petravic, Mladen

Description

Oxygen ions with energy in the range 4-15 keV O+ were used to synthesize surface oxide layers by bombarding Si samples at different angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiometry and thickness of the surface oxides. In particular, the effect of energy on the critical angle for the formation of SiO2 was determined. The thickness of the oxide layers were also simulated...[Show more]

dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorPetravic, Mladen
dc.date.accessioned2015-12-13T23:34:56Z
dc.identifier.issn0142-2421
dc.identifier.urihttp://hdl.handle.net/1885/93681
dc.description.abstractOxygen ions with energy in the range 4-15 keV O+ were used to synthesize surface oxide layers by bombarding Si samples at different angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiometry and thickness of the surface oxides. In particular, the effect of energy on the critical angle for the formation of SiO2 was determined. The thickness of the oxide layers were also simulated using the PROFILE and TRIM codes. A stoichiometric oxide was obtained for angles of incidence of <25°, irrespective of the ion energy used. The critical angle for oxide formation was found to be largest for the highest ion energy. The thickness of SiO2 varies linearly with the ion energy, and correlates very well with PROFILE and TRIM code simulations.
dc.publisherJohn Wiley & Sons Inc
dc.sourceSurface and Interface Analysis
dc.subjectKeywords: Duoplasmatrons; Software package PROFILE; Software package TRIM; Computer simulation; Computer software; Ion beams; Ion bombardment; Ion sources; Oxidation; Oxygen; Rutherford backscattering spectroscopy; Secondary ion mass spectrometry; Silica; Stoichiom Oxidation; RBS; Si; SIMS
dc.titleAngular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume27
dc.date.issued1999
local.identifier.absfor020405 - Soft Condensed Matter
local.identifier.ariespublicationMigratedxPub25072
local.type.statusPublished Version
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPetravic, Mladen, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage92
local.bibliographicCitation.lastpage97
dc.date.updated2015-12-12T09:38:03Z
local.identifier.scopusID2-s2.0-0033076211
CollectionsANU Research Publications

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