Skip navigation
Skip navigation

Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source

Deenapanray, Prakash; Petravic, Mladen

Description

Oxygen ions with energy in the range 4-15 keV O+ were used to synthesize surface oxide layers by bombarding Si samples at different angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiometry and thickness of the surface oxides. In particular, the effect of energy on the critical angle for the formation of SiO2 was determined. The thickness of the oxide layers were also simulated...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93681
Source: Surface and Interface Analysis

Download

File Description SizeFormat Image
01_Deenapanray_Angular_and_Energy_Dependence_1999.pdf174.76 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator