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Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source

Deenapanray, Prakash; Petravic, Mladen


Oxygen ions with energy in the range 4-15 keV O+ were used to synthesize surface oxide layers by bombarding Si samples at different angles of incidence with respect to the surface normal. High-resolution Rutherford backscattering spectroscopy and channelling were used to determine both the stoichiometry and thickness of the surface oxides. In particular, the effect of energy on the critical angle for the formation of SiO2 was determined. The thickness of the oxide layers were also simulated...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Surface and Interface Analysis


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