Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 109 to 1010 cm-2. Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at Ev + 0.19 and Ev + 0.35 eV, two additional defect levels at 0.28 and 0.51 eV above the valence band edge (Ev) are resolved. They are identified as hydrogen related after...[Show more]
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|Source:||Journal of Applied Physics|
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