Deenapanray, Prakash; Petravic, Mladen
Secondary ion mass spectrometry (SIMS) was used to investigate the segregation of several metal impurities in Si under low-energy oxygen ion bombardment. Our results suggested that both the segregation of Ca, Cr, and Ta at the SiO2/Si interface, and the antisegregation of Ti, Hf, and Zr into the oxide were thermodynamically driven. The migration behavior of Ca indicates that CaO, having a higher heat of formation than Si, was most probably formed under oxygen bombardment. Sharper in-depth...[Show more]
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