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On the Migration Behaviour of Metal Impurities in Si During Secondary Ion Mass Spectrometry Profiling Using Low-Energy Oxygen Ions

Deenapanray, Prakash; Petravic, Mladen

Description

Secondary ion mass spectrometry (SIMS) was used to investigate the segregation of several metal impurities in Si under low-energy oxygen ion bombardment. Our results suggested that both the segregation of Ca, Cr, and Ta at the SiO2/Si interface, and the antisegregation of Ti, Hf, and Zr into the oxide were thermodynamically driven. The migration behavior of Ca indicates that CaO, having a higher heat of formation than Si, was most probably formed under oxygen bombardment. Sharper in-depth...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/93677
Source: Journal of Applied Physics

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