Electic-Field-Enhanced Emission and Annealing Behaviour of Electron Traps Introduced in n-Si by Low-Energy He Ion Bombardment
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Deenapanray, Prakash; Meyer, W E; Auret, Francois D
Description
The isochronal annealing and electric-field-enhanced emission properties of three defects (EHe203, EHe584 and EHe211), observed in low-energy He-ion bombarded n-Si, were studied using deep level transient spectroscopy. EHe203 (EC - 0.20 eV) and EHe584 (EC - 0.58 eV) were thermally stable up to ∼400°C after which their removal was accompanied by the introduction of a secondary defect EHe211 (EC - 0.21 eV). EHe211 was thermally stable at 650°C. The emission rate of EHe203 was significant for...[Show more]
Collections | ANU Research Publications |
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Date published: | 1999 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/93676 |
Source: | Semiconductor Science and Technology |
DOI: | 10.1088/0268-1242/14/1/005 |
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