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Electic-Field-Enhanced Emission and Annealing Behaviour of Electron Traps Introduced in n-Si by Low-Energy He Ion Bombardment

Deenapanray, Prakash; Meyer, W E; Auret, Francois D


The isochronal annealing and electric-field-enhanced emission properties of three defects (EHe203, EHe584 and EHe211), observed in low-energy He-ion bombarded n-Si, were studied using deep level transient spectroscopy. EHe203 (EC - 0.20 eV) and EHe584 (EC - 0.58 eV) were thermally stable up to ∼400°C after which their removal was accompanied by the introduction of a secondary defect EHe211 (EC - 0.21 eV). EHe211 was thermally stable at 650°C. The emission rate of EHe203 was significant for...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/14/1/005


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