Atomic Force Microscopy and High-Resolution RBS Investigation of the Surface Modification of Magnetron Sputter-Etched Si(111) in an Argon Plasma at Different Pressures
-
Altmetric Citations
Deenapanray, Prakash; Hillie, K; Demangel, Caroline; Ridgway, Mark C
Description
The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (Rrms) of plasma-etched Si decreased monotonically from 36±28 angstroms at 2×10-3 mbar to 13±6 angstroms at 2×10-2 mbar. High-resolution RBS showed that metallic impurity contamination increased with increasing plasma pressure,...[Show more]
dc.contributor.author | Deenapanray, Prakash | |
---|---|---|
dc.contributor.author | Hillie, K | |
dc.contributor.author | Demangel, Caroline | |
dc.contributor.author | Ridgway, Mark C | |
dc.date.accessioned | 2015-12-13T23:34:55Z | |
dc.identifier.issn | 0142-2421 | |
dc.identifier.uri | http://hdl.handle.net/1885/93675 | |
dc.description.abstract | The surface morphology and metallic contamination of magnetron sputter-etched Si(111) was investigated by atomic force microscopy (AFM) and high-resolution Rutherford backscattering spectroscopy (RBS) as a function of Ar plasma pressure. The root-mean-square roughness (Rrms) of plasma-etched Si decreased monotonically from 36±28 angstroms at 2×10-3 mbar to 13±6 angstroms at 2×10-2 mbar. High-resolution RBS showed that metallic impurity contamination increased with increasing plasma pressure, whereas Ar atom incorporation in the near-surface region of etched Si followed the opposite pressure dependence. The barrier height of Pd Schottky contacts fabricated on the etched n-Si also decreased monotonically with decreasing Ar pressure, showing that the extent of barrier height modification was not affected by metallic impurity contamination. High-resolution RBS combined with channelling experiments showed that the topmost layers of the plasma-etched samples were disordered. The thickness of the damaged layers decreased with increasing plasma pressure. | |
dc.publisher | John Wiley & Sons Inc | |
dc.source | Surface and Interface Analysis | |
dc.subject | Keywords: Argon; Atomic force microscopy; Chemical modification; Contamination; Crystal impurities; Crystal orientation; Magnetron sputtering; Plasma etching; Pressure effects; Rutherford backscattering spectroscopy; Surface roughness; High resolution Rutherford ba | |
dc.title | Atomic Force Microscopy and High-Resolution RBS Investigation of the Surface Modification of Magnetron Sputter-Etched Si(111) in an Argon Plasma at Different Pressures | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 27 | |
dc.date.issued | 1999 | |
local.identifier.absfor | 020405 - Soft Condensed Matter | |
local.identifier.ariespublication | MigratedxPub25066 | |
local.type.status | Published Version | |
local.contributor.affiliation | Deenapanray, Prakash, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Hillie, K, University of Transkei | |
local.contributor.affiliation | Demangel, Caroline, CNRS | |
local.contributor.affiliation | Ridgway, Mark C, College of Physical and Mathematical Sciences, ANU | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.startpage | 881 | |
local.bibliographicCitation.lastpage | 888 | |
local.identifier.doi | 10.1002/(SICI)1096-9918(199910)27:10<881::AID-SIA644>3.0.CO;2-6 | |
dc.date.updated | 2015-12-12T09:37:59Z | |
local.identifier.scopusID | 2-s2.0-0032595802 | |
Collections | ANU Research Publications |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Deenapanray_Atomic_Force_Microscopy_and_1999.pdf | 352.7 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator